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UNR1231|UN1231 Datasheet

  • UNR1231|UN1231

  • Composite Device - Transistors with built-in Resistor

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Transistors with built-in Resistor
UNR1231
(UN1231)
, UNR1231A
(UN1231A)
Silicon NPN epitaxial planar type
Unit: mm
For amplification of the low frequency
6.9
鹵0.1
2.5
鹵0.1
(1.0)
(0.4)
(1.5)
(1.5)
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage UNR1231
(Emitter open)
UNR1231A
V
CEO
I
C
I
CP
P
T
T
j
T
stg
Symbol
V
CBO
Rating
20
60
20
50
0.7
1.5
1.0
150
鈭?5
to
+150
cm
2
A
A
W
擄C
擄C
V
Unit
V
3
1.0
鹵0.1
(0.85)
2.4
鹵0.2
0.45
鹵0.05
2
(2.5)
1
1.25
鹵0.05
0.55
鹵0.1
Collector-emitter voltage UNR1231
(Base open)
Collector current
Peak collector current
Total power dissipation
*
Junction temperature
Storage temperature
UNR1231A
(2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
R
1
(1 k鈩?
B
R
2
(47 K鈩?
C
Note) *: Printed circuit board: Copper foil area of 1
or more, and the
board thickness of 1.7 mm for the collector portion
E
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage
(Emitter open)
UNR1231
UNR1231A
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
R
1
R
1
/R
2
I
C
=
1 mA, I
B
=
0
V
CB
=
15 V, I
E
=
0
V
CE
=
15 V, I
B
=
0
V
EB
=
14 V, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
I
C
=
500 mA, I
B
=
5 mA
V
CB
=
20 V, I
E
= 鈭?0
mA, f
=
200 MHz
0.7
0.016
55
1
0.021
1.3
0.025
800
Symbol
V
CBO
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
Min
20
60
20
50
1
10
0.5
2 100
0.4
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
V
MHz
V
錚?/div>
V
Typ
Max
Unit
V
Collector-emitter voltage UNR1231
(Base open)
UNR1231A
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
*
Transition frequency
Input resistance
Resistance ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003
SJH00005BED
4.1
鹵0.2
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
M type mold package
鈥?/div>
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
3.5
鹵0.1
鈻?/div>
Features
(1.0)
2.0
鹵0.2
4.5
鹵0.1
R 0.9
R 0.7
1

UNR1231|UN1231相關(guān)型號(hào)PDF文件下載

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  • 英文版
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  • 英文版
    Silicon PNP epitaxial planer transistor
    PANASONIC ...
  • 英文版
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    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer transistor
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer transistor
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer transistor
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  • 英文版
    Silicon PNP epitaxial planer transistor
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  • 英文版
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